Jonas Lähnemann
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Jonas Lähnemann
Post doctoral research assistant

Paul Drude Institute for Solid State Electronics
Berlin, Germany

On these pages you can find:

Information on my academic background

Pictures, mainly from trips and time abroad

Reports from my time studying in Kenya

Impressions from the time of my volunteer service in Israel

Information concerning my Flevo recumbent bicycle

Useful resources

A listing of my favourite open-source software.

A summary of publisher policies concerning the posting of electronic preprints.

Selected publications

P. Vogt, et al.
Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
Phys. Rev. Lett. 119, 196001 (2017)
[DOI:10.1103/PhysRevLett.119.196001] [BibTeX]
[PDF / © APS; download for personal use only]

J. Lähnemann, et al.
Near-infrared intersubband photodetection in GaN/AlN nanowires
Nano Lett. 17, 6954 (2017)
[DOI:10.1021/acs.nanolett.7b03414] [arXiv:1710.00871] [BibTeX] [ACS author link]

J. Lähnemann, et al.
Radial Stark Effect in (In,Ga)N Nanowires
Nano Lett. 16, 917 (2016)
[DOI:10.1021/acs.nanolett.5b03748] [arXiv:1601.07201] [BibTeX] [ACS author link]

J. Lähnemann, et al.
Luminescence associated with stacking faults in GaN (topical review)
J. Phys. D: Appl. Phys. 47, 423001 (2014)
[DOI:10.1088/0022-3727/47/42/423001] [arXiv:1405.1261] [BibTeX]

J. Lähnemann, et al.
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302] [arXiv:1201.4294]
[PDF / © APS; download for personal use only] [BibTeX]

More publications

Recent talks

UV photosensing characteristics of nanowire-based GaN/AlN superlattices (contributed talk)
October 2016, International Workshop on Nitride Semiconductors (IWN), Orlando

UV Photosensing Characteristics of Nanowire Based GaN/AlN Superlattices (invited talk)
May 2016, EMN Meeting on Nanowires, Amsterdam

Lecturer at International School on Nitride Materials and Devices
January 2016, Bilkent Üniversitesi, Ankara, Turkey

Luminescence associated with stacking faults in GaN (invited talk)
September 2015, 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVI), Suzhou, China

GaN/AlN nanowire heterostructures for intersubband applications (contributed talk)
September 2015, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China

More talks and conference presentations

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