Jonas Lähnemann
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Publications

2017
2016
2015
2014
2013
2012
2011
2010
2009
PhD thesis
Diplomarbeit

Find references and citations of my publications via ADS Labs [NASA/Harvard (astro)physics data system]

My articles on arXiv.org

My ORCID: 0000-0003-4072-2369

My ResearcherID: L-3589-2013


The following list provides PDF downloads and/or links to arXiv preprints of the articles (where available) depending on the journal/publisher policy.

2017

M. Spies, M. I. den Hertog, P. Hille, J. Schörmann, J. Polaczyński, B. Gayral, M. Eickhoff, E. Monroy and J. Lähnemann
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
Nano Lett. 17, ASAP (2017)
[DOI:10.1021/acs.nanolett.7b01118] [BibTeX]

J. Kamimura, P. Bogdanoff, F. F. Abdi, J. Lähnemann, R. van de Krol, H. Riechert and L. Geelhaar
Photoelectrochemical Properties of GaN Photoanodes with Cobalt Phosphate Catalyst for Solar Water Splitting in Neutral Electrolyte
J. Phys. Chem. C 121, 12540--12545 (2017)
[DOI:10.1021/acs.jpcc.7b02253] [BibTeX]

2016

J. Lähnemann, T. Flissikowski, M. Wölz, L. Geelhaar, H. T. Grahn, O. Brandt and U. Jahn
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime
Nanotechnology 27, 455706 (2016)
[DOI:10.1088/0957-4484/27/45/455706] [arXiv:1607.03397] [BibTeX]

S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski and O. Brandt
Comparison of the Luminous Efficiencies of Ga- and N-Polar $In_xGa_1-xN/In_yGa_1-yN$ Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
Phys. Rev. Applied 6, 034017 (2016)
[DOI:10.1103/PhysRevApplied.6.034017] [arXiv:1510.06512] [BibTeX]

U. Jahn, M. Musolino, J. Lähnemann, P. Dogan, S. F. Garrido, J. F. Wang, K. Xu, D. Cai, L. F. Bian, X. J. Gong and H. Yang
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
Semicond. Sci. Technol. 31, 065018 (2016)
[DOI:10.1088/0268-1242/31/6/065018] [arXiv:1605.03089] [BibTeX]

J. Lähnemann, M. Den Hertog, P. Hille, M. de la Mata, T. Fournier, J. Schörmann, J. Arbiol, M. Eickhoff and E. Monroy
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Nano Lett. 16, 3260 (2016)
[DOI:10.1021/acs.nanolett.6b00806] [arXiv:1604.07978] [BibTeX] [ACS author link *]

C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, J. Schörmann, M. Eickhoff and E. Monroy
Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures
Jpn. J. Appl. Phys. 55, 05FG05 (2016)
[DOI:10.7567/JJAP.55.05FG05] [BibTeX]

C. B. Lim, A. Ajay, C. Bougerol, J. Lähnemann, F. Donatini, J. Schörmann, E. Bellet-Amalric, D. A. Browne, M. Jiménez-Rodréguez and E. Monroy
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
Nanotechnology 27, 145201 (2016)
[DOI:10.1088/0957-4484/27/14/145201] [BibTeX]

J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar and O. Brandt
Radial Stark Effect in (In,Ga)N Nanowires
Nano Lett. 16, 917 (2016)
[DOI:10.1021/acs.nanolett.5b03748] [arXiv:1601.07201] [BibTeX] [ACS author link *]

2015

C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff and E. Monroy
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5--10 THz band
Nanotechnology 26, 435201 (2015)
[DOI:10.1088/0957-4484/26/43/435201] [arXiv:1506.00353] [BibTeX]

F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreiliger, M. Ramsteiner, Y. A. R. Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert and L. Miglio
Integration of GaN Crystals on Micropatterned Si(001) Substrates by Plasma-Assisted Molecular Beam Epitaxy
Cryst. Growth Des. 15, 4886 (2015)
[DOI:10.1021/acs.cgd.5b00727] [BibTeX] [ACS author link *]

C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol and E. Monroy
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
J. Appl. Phys. 118, 014309 (2015)
[DOI:10.1063/1.4926423] [arXiv:1504.04989] [BibTeX] [PDF / © AIP; download for personal use only]

2014

P. Corfdir, C. Hauswald, J. K. Zettler, T. Flissikowski, J. Lähnemann, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn and O. Brandt
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
Phys. Rev. B 90, 195309 (2014)
[DOI:10.1103/PhysRevB.90.195309] [arXiv:1408.5263] [BibTeX] [PDF / © APS; download for personal use only]

J. Lähnemann, U. Jahn, O. Brandt, T. Flissikowski, P. Dogan and H. T. Grahn
Luminescence associated with stacking faults in GaN (topical review), J. Phys. D - Highlight of 2014
J. Phys. D: Appl. Phys. 47, 423001 (2014)
[DOI:10.1088/0022-3727/47/42/423001] [arXiv:1405.1261] [BibTeX]

J. Lähnemann, C. Hauswald, M. Wölz, U. Jahn, M. Hanke, L. Geelhaar and O. Brandt
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy
J. Phys. D: Appl. Phys. 47, 394010 (2014)
[DOI:10.1088/0022-3727/47/39/394010] [arXiv:1405.1507] [BibTeX]

M. Musolino, A. Tahraoui, F. Limbach, J. Lähnemann, U. Jahn, O. Brandt, L. Geelhaar and H. Riechert
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Appl. Phys. Lett. 105, 083505 (2014)
[DOI:http://dx.doi.org/10.1063/1.4894241] [arXiv:1410.3709] [BibTeX] [PDF / © AIP; download for personal use only]

2013

X. Wang, S. Li, M. S. Mohajerani, J. Ledig, H.-H. Wehmann, M. Mandl, M. Strassburg, U. Steegmüller, U. Jahn, J. Lähnemann, H. Riechert, I. Griffiths, D. Cherns and A. Waag
Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures
Cryst. Growth Des. 13, 3475--3480 (2013)
[DOI:10.1021/cg4003737] [BibTeX] [BibTeX] [ACS author link *]

J. Kamimura, P. Bogdanoff, J. Lähnemann, C. Hauswald, L. Geelhaar, S. Fiechter and H. Riechert
Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy
J. Am. Chem. Soc. 135, 10242--10245 (2013)
[DOI:10.1021/ja404043k] [BibTeX] [BibTeX] [ACS author link *]

C. Chèze, M. Siekacz, G. Muziol, H. Turski, S. Grzanka, M. Kryśko, J. L. Weyher, M. Boćkowski, C. Hauswald, J. Lähnemann, O. Brandt, M. Albrecht and C. Skierbiszewski
Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
J. Vac. Sci. Technol. B 31, 03C130 (2013)
[DOI:10.1116/1.4802964] [BibTeX] [PDF / © AVS; download for personal use only]

B. Wilsch, U. Jahn, B. Jenichen, J. Lähnemann, H. T. Grahn, H. Wang and H. Yang
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Appl. Phys. Lett. 102, 052109 (2013)
[DOI:10.1063/1.4790591] [arXiv:1301.4138] [BibTeX] [PDF / © AIP; download for personal use only]

2012

F. Limbach, C. Hauswald, J. Lähnemann, M. Wölz, O. Brandt, A. Trampert, M. Hanke, U. Jahn, R. Calarco, L. Geelhaar and H. Riechert
Current path in light emitting diodes based on nanowire ensembles
Nanotechnology 23, 465301 (2012)
[DOI:10.1088/0957-4484/23/46/465301] [arXiv:1210.7144] [BibTeX]

M. Wölz, J. Lähnemann, O. Brandt, V. M. Kaganer, M. Ramsteiner, C. Pfüller, C. Hauswald, C. N. Huang, L. Geelhaar and H. Riechert
Correlation between In content and emission wavelength of InxGa1-xN/GaN nanowire heterostructures
Nanotechnology 23, 455203 (2012)
[DOI:10.1088/0957-4484/23/45/455203] [arXiv:1210.7597] [BibTeX]

J. Lähnemann, O. Brandt, U. Jahn, C. Pfüller, C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bechstedt, A. Trampert and L. Geelhaar
Direct experimental determination of the spontaneous polarization of GaN
Phys. Rev. B 86, 081302(R) (2012)
[DOI:10.1103/PhysRevB.86.081302] [arXiv:1201.4294] [BibTeX] [PDF / © APS; download for personal use only]

F. Gericke, T. Flissikowski, J. Lähnemann, F. Katmis, W. Braun, H. Riechert and H. T. Grahn
Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films
J. Appl. Phys. 111, 113524 (2012)
[DOI:10.1063/1.4728221] [BibTeX] [PDF / © AIP; download for personal use only]

U. Jahn, J. Lähnemann, C. Pfüller, O. Brandt, S. Breuer, B. Jenichen, M. Ramsteiner, L. Geelhaar and H. Riechert
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Phys. Rev. B 85, 045323 (2012)
[DOI:10.1103/PhysRevB.85.045323] [arXiv:1201.6540] [BibTeX] [PDF / © APS; download for personal use only]

2011

Y. Takagaki, B. Jenichen, U. Jahn, M. Ramsteiner, K.-J. Friedland and J. Lähnemann
Hot wall epitaxy of topological insulator films
Semicond. Sci. Technol. 26, 125009 (2011)
[DOI:10.1088/0268-1242/26/12/125009] [BibTeX]

J. Lähnemann, O. Brandt, C. Pfüller, T. Flissikowski, U. Jahn, E. Luna, M. Hanke, M. Knelangen, A. Trampert and H. T. Grahn
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Phys. Rev. B 84, 155303 (2011)
[DOI:10.1103/PhysRevB.84.155303] [arXiv:1109.6039] [BibTeX] [PDF / © APS; download for personal use only]

P. Dogan, O. Brandt, C. Pfüller, J. Lähnemann, U. Jahn, C. Roder, A. Trampert, L. Geelhaar and H. Riechert
Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy
Cryst. Growth Des. 11, 4257-4260 (2011)
[DOI:10.1021/cg200801x] [BibTeX]

E. Dimakis, J. Lähnemann, U. Jahn, S. Breuer, M. Hilse, L. Geelhaar and H. Riechert
Self-Assisted Nucleation and Vapor-Solid Growth of InAs Nanowires on Bare Si(111)
Cryst. Growth Des. 11, 4001-4008 (2011)
[DOI:10.1021/cg200568m] [BibTeX]

S. C. Erwin, C. Gao, C. Roder, J. Lähnemann and O. Brandt
Epitaxial Interfaces between Crystallographically Mismatched Materials
Phys. Rev. Lett. 107, 026102 (2011)
[DOI:10.1103/PhysRevLett.107.026102] [arXiv:1106.2955] [BibTeX] [PDF / © APS; download for personal use only]

C. Gao, O. Brandt, J. Lähnemann, J. Herfort, H.-P. Schönherr, U. Jahn and B. Jenichen
Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)
J. Cryst. Growth 323, 359 (2011)
[DOI:10.1016/j.jcrysgro.2010.10.117] [BibTeX]

W. Bergbauer, M. Strassburg, C. Kölper, N. Linder, C. Roder, J. Lähnemann, A. Trampert, S. Fündling, S. Li, H.-H. Wehmann and A. Waag
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
J. Cryst. Growth 315, 164 (2011)
[DOI:10.1016/j.jcrysgro.2010.07.067] [BibTeX]

H. Riechert, O. Brandt, C. Cheze, V. Consonni, M. Knelangen, J. Lähnemann, F. Limbach, C. Pfüller, A. Trampert, M. Wölz and L. Geelhaar
Nitride nanowire structures for LED applications
Proc. SPIE 7954, 79540S (2011)
[DOI:10.1117/12.877458] [BibTeX]

2010

C. Gao, O. Brandt, S. C. Erwin, J. Lähnemann, U. Jahn, B. Jenichen and H.-P. Schönherr
"Cube-on-hexagon" orientation relationship for Fe on GaN(000-1): The missing link in bcc/hcp epitaxy, Editor's Suggestion
Phys. Rev. B 82, 125415 (2010)
[DOI:10.1103/PhysRevB.82.125415] [BibTeX] [PDF / © APS; download for personal use only]

Y. Takagaki, J. Lähnemann, B. Jenichen, J. Herfort, C. Herrmann and U. Jahn
Distribution of structural domains in MnAs layers grown on GaAs substrates
J. Appl. Phys. 108, 123510 (2010)
[DOI:10.1063/1.3520654] [BibTeX] [PDF / © AIP; download for personal use only]

W. Bergbauer, M. Strassburg, C. Kölper, N. Linder, C. Roder, J. Lähnemann, A. Trampert, S. Fündling, S. F. Li, H.-H. Wehmann and A. Waag
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Nanotechnology 21, 305201 (2010)
[DOI:10.1088/0957-4484/21/30/305201] [BibTeX]

S. Fündling, Ü. Sökmen, A. Behrends, M. A. M. Al-Suleiman, S. Merzsch, S. Li, A. Bakin, H.-H. Wehmann, A. Waag, J. Lähnemann, U. Jahn, A. Trampert and H. Riechert
GaN and ZnO nanostructures
Phys. Status Solidi B 247, 2315 (2010)
[DOI:10.1002/pssb.201046062] [BibTeX]

2009

N. Barreau, J. Lähnemann, F. Couzinié-Devy, L. Assmann, P. Bertoncini and J. Kessler
Impact of Cu-rich growth on the CuIn1-xGaxSe2 surface morphology and related solar cells behaviour
Sol. Energ. Mat. Sol. C. 93, 2013 (2009)
[DOI:10.1016/j.solmat.2009.08.004] [BibTeX]



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