Jonas Lähnemann
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Talks and conference presentations

J. Lähnemann, M. D. Hertog, P. Hille, M. de la Mata, T. Fournier, J. Schörmann, J. Arbiol, M. Eickhoff and E. Monroy
UV photosensing characteristics of nanowire-based GaN/AlN superlattices (contributed talk)
October 2016, International Workshop on Nitride Semiconductors (IWN), Orlando

J. Lähnemann
Interband and intersubband photosensing characteristics of GaN/AlN nanostructures (seminar talk)
July 2016, Paul-Drude-Institut für Festkörperelektronik, Berlin

J. Lähnemann, M. D. Hertog, P. Hille, M. de la Mata, T. Fournier, J. Schörmann, J. Arbiol, M. Eickhoff and E. Monroy
UV Photosensing Characteristics of Nanowire Based GaN/AlN Superlattices (invited talk)
May 2016, EMN Meeting on Nanowires, Amsterdam

J. Lähnemann
- Optical Properties of Nitride Semiconductors
- Novel Nitride Devices: Nanowires
- Novel Nitride Devices: Intersubband Physics and Optoelectronics

January 2016, International School on Nitride Materials and Devices, Bilkent Üniversitesi, Ankara, Turkey

J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar and O. Brandt
Radial Stark effect in (In,Ga)N nanowires (poster)
October 2015, Nanowires Workshop, Barcelona, Spain

J. Lähnemann, M. D. Hertog, B. Gayral, T. Fournier, P. Hille, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff and E. Monroy
UV photodetector based on single GaN/AlN nanowire heterostructures (poster)
October 2015, Nanowires Workshop, Barcelona, Spain

J. Lähnemann, U. Jahn, T. Flissikowski, P. Dogan, H. T. Grahn and O. Brandt
Luminescence associated with stacking faults in GaN (invited talk)
September 2015, 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVI), Suzhou, China

J. Lähnemann, M. Beeler, M. D. Hertog, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff and E. Monroy
GaN/AlN nanowire heterostructures for intersubband applications (contributed talk)
September 2015, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China

J. Lähnemann, U. Jahn, C. Hauswald, M. Wölz, M. Hanke, L. Geelhaar and O. Brandt
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy (invited talk)
October 2014, Sino-German Symposium 'III-V Materials and Devices on the Nanometer Scale', Berlin, Germany

J. Lähnemann, J. Kamimura, L. Geelhaar and O. Brandt
Discrepancy between composition and emission energy for (In,Ga)N nanowires (contributed talk)
August 2014, International Workshop on Nitride Semiconductors (IWN), Wrocław, Poland

J. Lähnemann, M. Wölz, U. Jahn, O. Brandt and L. Geelhaar
Spatially resolving the emission along the axis of (In,Ga)N/GaN nanowire heterostructures using cathodoluminescence spectroscopy (contributed talk)
November 2013, Nanowires 2013 (Workshop on the physics, chemistry and applications of nanowires), Rehovot, Israel

J. Lähnemann
Stacking fault luminescence and the spontaneous polarization of GaN (seminar talk)
October 2013, Institute of Experimental Physics, Otto-von-Guericke Universität Magdeburg, Germany

J. Lähnemann, U. Jahn, C. Pfüller, C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bechstedt, A. Trampert, L. Geelhaar and O. Brandt
Stacking fault luminescence in GaN: emission energies, spontaneous polarization, and field screening (contributed talk)
August 2013, 10th International Conference on Nitride Semiconductors (ICNS), Washington, DC, USA

J. Lähnemann and U. Jahn
Cathodoluminescence of group-III-V semiconductor layers and nanostructures (invited talk)
June 2013, Gatan European Workshop on Cathodoluminescence and Ion-beam Cross Section Preparation, Berlin, Germany

J. Lähnemann
Experimental determination of the spontaneous polarization of GaN (seminar talk)
December 2012, Institute of Semiconductors (Chinese Academy of Sciences), Beijing, China

J. Lähnemann
Experimental determination of the spontaneous polarization of GaN (seminar talk)
November 2012, Suzhou Institute of Nano-Tech and Nano-Bionics (Chinese Academy of Sciences), Suzhou, China

J. Lähnemann, O. Brandt, U. Jahn
Experimental determination of the spontaneous polarization of GaN (seminar talk)
October 2012, Scientific Advisory Board Meeting of the Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

J. Lähnemann, Friederich Limbach, Christian Hauswald, Martin Wölz, Oliver Brandt, Uwe Jahn, Raffaella Calarco, Lutz Geelhaar and Henning Riechert
Filamentation of the current flow in light emitting diodes based on nanowire ensembles (invited talk)
September 2012, Sino-German Symposium 'Frontier Research on Smart Nanodevices', Braunschweig, Germany

J. Lähnemann, Uwe Jahn, Carsten Pfüller, Oliver Brandt, Steffen Breuer, Bernd Jenichen, Manfred Ramsteiner, Lutz Geelhaar, Henning Riechert
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments (contributed talk)
September 2012, Nanowires 2012 (Workshop on the physics, chemistry and applications of nanowires), Berlin, Germany

J. Lähnemann, O. Brandt, U. Jahn, C. Pfüller, C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bechstedt, A. Trampert, and L. Geelhaar
Spontaneous polarization of GaN derived from stacking fault luminescence (contributed talk)
March 2012, Frühjahrstagung der Deutschen Physikalischen Gesellschaft (DPG), Berlin, Germany

J. Lähnemann, C. Pfüller, O. Brandt, U. Jahn, M. Hanke, E. Luna, T. Flissikowski, L. Schrottke, M. Knelangen, A. Trampert, H. T. Grahn
Quantum-Confined Stark Effect Observed in (In,Ga)N/GaN Nanowire Heterostructures Exhibiting Green Luminescence (contributed talk)
May 2011, European Material Research Society (EMRS) Spring Meeting, Nice, France

J. Lähnemann, C. Pfüller, O. Brandt, U. Jahn, E. Luna, T. Flissikowski, L. Schrottke, M. Knelangen, A. Trampert, H. T. Grahn
Quantum-Confined Stark Effect Observed in (In,Ga)N/GaN Nanowire Heterostructures (contributed talk)
March 2011, Frühjahrstagung der Deutschen Physikalischen Gesellschaft (DPG), Dresden, Germany

J. Lähnemann
Analytical SEM: Cathodoluminescence and Electron Backscatter Diffraction on GaN nanostructures (seminar talk)
July 2010, Institut des Materiaux Jean Rouxel (IMN) - group on co-evaporation of chalcogenides for solar cells, Nantes, France

J. Lähnemann, P. Dogan, C. Pfüller, U. Jahn (presenter), O. Brandt, L. Geelhaar, C. Roder, A. Trampert
Cathodoluminescence Imaging of Stacking Faults in Laterally Overgrown GaN Nanocolumns (contributed talk)
May 2010: 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED), Beijing, China (2010)

J. Lähnemann, P. Dogan, C. Roder, C. Pfüller, U. Jahn, O. Brandt, L. Geelhaar, A. Trampert, H. Riechert
Cathodoluminescence Imaging of Stacking Faults in Laterally Overgrown GaN Nanowires (contributed talk)
May 2010, 10th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), Darmstadt/Seeheim, Germany

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