@Article{Fernandez-Garrido_na_2019,
  author    = {Fern\'andez-Garrido, Sergio and Auzelle, Thomas and L\"ahnemann, Jonas and Wimmer, Kilian and Tahraoui, Abbes and Brandt, Oliver},
  title     = {Top-down fabrication of ordered arrays of {GaN} nanowires by selective area sublimation},
  journal   = {Nanoscale Adv.},
  year      = {2019},
  volume    = {1},
  number    = {5},
  pages     = {1893--1900},
  abstract  = {We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al2O3. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 μm{,} respectively{,} are simultaneously produced under identical conditions. The sublimation process{,} carried out under high vacuum conditions{,} is analyzed in situ by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectrometry. During the sublimation process{,} the GaN(0001) surface vanishes{,} giving way to the formation of semi-polar {1̄03} facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of (3.54 ± 0.07) eV and an exponential prefactor of 1.58 × 1031 atoms per cm2 per s. The analysis of the samples by low-temperature cathodoluminescence spectroscopy reveals that{,} in contrast to dry etching{,} the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO.},
  doi       = {10.1039/C8NA00369F},
  arxiv     = {1905.04948},
  publisher = {RSC},
}