@ARTICLE{Fundling_pssb_2010,
  author = {F\"undling, S. and S\"okmen, \"U. and Behrends, A. and Al-Suleiman,
	M. A. M. and Merzsch, S. and Li, S. and Bakin, A. and Wehmann, H.-H.
	and Waag, A. and L\"ahnemann, J. and Jahn, U. and Trampert, A. and
	Riechert, H.},
  title = {{GaN} and {ZnO} nanostructures},
  journal = Phys. Stat. Sol. B,
  year = {2010},
  volume = {247},
  pages = {2315--2328},
  number = {10},
  abstract = {GaN and ZnO are both wide band
	gap semiconductors with interesting properties concerning optoelectronic
	and sensor device applications. Due to the lack or the high costs
	of native substrates, alternatives like sapphire, silicon, or silicon
	carbide are taken, but the resulting lattice and thermal mismatches
	lead to increased defect densities which reduce the material quality.
	In contrast, nanostructures with high aspect ratio have lower defect
	densities as compared to layers. In this work, we give an overview
	on our results achieved on both ZnO as well as GaN based nanorods.
	ZnO nanostructures were grown by a wet chemical approach as well
	as by VPT on different substrates – even on flexible polymers. To
	compare the growth results we analyzed the structures by XRD and
	PL and show possible device applications. The GaN nano- and microstructures
	were grown by metal organic vapor phase epitaxy either in a self-organized
	process or by selective area growth for a better control of shape
	and material composition. Finally we take a look onto possible device
	applications, presenting our attempts, e.g., to build LEDs based
	on GaN nanostructures.},
  doi = {10.1002/pssb.201046062},
  keywords = {GaN, light emitting diodes, nanorods, nanostructures, optical properties,
	ZnO},
  publisher = {WILEY-VCH Verlag}
}