@ARTICLE{Gericke_jap_2012,
  author = {F. Gericke and T. Flissikowski and J. L\"{a}hnemann and F. Katmis
	and W. Braun and H. Riechert and H. T. Grahn},
  title = {Optical switching and related structural properties of epitaxial
	{Ge$_2$Sb$_2$Te$_5$} films},
  journal = J. Appl. Phys.,
  year = {2012},
  volume = {111},
  pages = {113524},
  number = {11},
  abstract = {We investigate the optical switching process and the related structural
	properties of (GeTe)(Sb2Te3) epitaxial films close to Ge2Sb2Te5 composition
	on GaSb(001). While the amorphization process can take place in a
	single or in multiple steps, the re-crystallization process always
	takes place in multiple steps. Intermediate stages of the re-crystallization
	process are characterized by small crystalline islands within the
	amorphous area. The structural properties are investigated by optical
	microscopy and electron backscatter diffraction (EBSD) in a scanning
	electron microscope. The analysis of the EBSD pattern demonstrates
	that the crystalline islands at intermediate stages of the re-crystallization
	process exhibit different orientations. We conclude that the re-crystallization
	process is driven by nucleation without any orientation information
	from the substrate.},
  doi = {10.1063/1.4728221},
  keywords = {amorphisation; antimony compounds; electron backscattering; epitaxial
	layers; germanium compounds; nucleation; optical microscopy; recrystallisation;
	scanning electron microscopy; switching; thin films},
  numpages = {4},
  publisher = {AIP}
}