@Article{Laehnemann_nt_2016,
  Title                    = {Quenching of the luminescence intensity of {GaN} nanowires under electron beam exposure: impact of {C} adsorption on the exciton lifetime},
  Author                   = {L\"ahnemann, Jonas and Flissikowski, Timur and W\"olz, Martin and Geelhaar, Lutz and Grahn, Holger T. and Brandt, Oliver and Jahn, Uwe},
  Journal                  = {Nanotechnology},
  Volume                   = {27},
  Number                   = {45},
  Pages                    = {455706},
  Year                     = {2016},
  Abstract                 = {Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.},
  Arxiv                    = {1607.03397},
  Doi                      = {10.1088/0957-4484/27/45/455706}
}