@Article{Lim_jjap_2016,
  Title                    = {Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar {GaN/Al(Ga)N} heterostructures},
  Author                   = {Lim, Caroline B. and Beeler, Mark and Ajay, Akhil and L\"ahnemann, Jonas and Bellet-Amalric, Edith and Bougerol, Catherine and Sch\"ormann, J\"org and Eickhoff, Martin and Monroy, Eva},
  Journal                  = {Jpn. J. Appl. Phys.},
  Volume                   = {55},
  Number                   = {5S},
  Pages                    = {05FG05},
  Year                     = {2016},
  Abstract                 = {This paper assesses nonpolar m -oriented GaN:Si/Al(Ga)N heterostructures grown on free-standing GaN for intersubband optoelectronics in the short-wavelength, mid- and far-infrared ranges. Characterization results are compared with reference c -plane samples and interpreted by correlation with self-consistent Schrödinger-Poisson calculations. In the near- and mid-infrared regions, we demonstrate m -GaN/Al(Ga)N multi-quantum-wells exhibiting room-temperature intersubband absorption tunable in the range of 1.5-5.8 µm (827-214 meV), the long wavelength limit being set by the second order of the Reststrahlen band in the GaN substrates. Extending the study to the far-infrared region, low-temperature intersubband transitions in the 1.5-9 THz range (6.3-37.4 meV) are observed in larger m-plane GaN/AlGaN multi-quantum-wells, covering most of the 7-10 THz band forbidden to GaAs-based technologies.},
  Doi                      = {10.7567/JJAP.55.05FG05}
}