@ARTICLE{Limbach_nt_2012,
  author = {Limbach, F. and Hauswald, C. and L\"ahnemann, J. and W\"olz, M. and
	Brandt, O. and Trampert, A. and Hanke, M. and Jahn, U. and Calarco,
	R. and Geelhaar, L. and Riechert, H.},
  title = {Current path in light emitting diodes based on nanowire ensembles},
  journal = {Nanotechnology},
  year = {2012},
  volume = {23},
  pages = {465301},
  number = {46},
  abstract = {Light emitting diodes (LEDs) have been fabricated using ensembles
	of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates
	in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced
	current analysis, cathodoluminescence as well as biased μ-photoluminescence
	spectroscopy, transmission electron microscopy, and electrical measurements
	indicate that the electroluminescence of such LEDs is governed by
	the differences in the individual current densities of the single-NW
	LEDs operated in parallel, i.e. by the inhomogeneity of the current
	path in the ensemble LED. In addition, the optoelectronic characterization
	leads to the conclusion that these NWs exhibit N-polarity and that
	the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing
	quantum confined Stark effect.},
  arxiv = {1210.7144},
  doi = {10.1088/0957-4484/23/46/465301}
}