@ARTICLE{Wolz_nt_2012,
  author = {W\"olz, M. and L\"ahnemann, J. and Brandt, O. and Kaganer, V. M.
	and Ramsteiner, M. and Pf\"uller, C. and Hauswald, C. and Huang,
	C. N. and Geelhaar, L. and Riechert, H.},
  title = {Correlation between In content and emission wavelength of {In$_x$Ga$_{1-x}$N/GaN}
	nanowire heterostructures},
  journal = Nanotechnology,
  year = {2012},
  volume = {23},
  pages = {455203},
  number = {45},
  abstract = {GaN nanowire ensembles with axial In x Ga 1− x N multi-quantum-wells
	(MQWs) were grown by molecular beam epitaxy. In a series of samples
	we varied the In content in the MQWs from almost zero to around 20%.
	Within the nanowire ensemble, the MQWs fluctuate strongly in composition
	and size. Statistical information about the composition was obtained
	from x-ray diffraction and Raman spectroscopy. Photoluminescence
	at room temperature was obtained in the range of 2.2 to 2.5 eV, depending
	on In content. Contrary to planar MQWs, the intensity increases with
	increasing In content. We compare the observed emission energies
	with transition energies obtained from a one-dimensional model, and
	conclude that several mechanisms for carrier localization affect
	the luminescence of these three-dimensional structures.},
  arxiv = {1210.7597},
  doi = {10.1088/0957-4484/23/45/455203}
}