@Article{Azadmand_pssrrl_2020,
  author   = {Azadmand, Mani and Auzelle, Thomas and L\"ahnemann, Jonas and Gao, Guanhui and Nicolai, Lars and Ramsteiner, Manfred and Trampert, Achim and Sanguinetti, Stefano and Brandt, Oliver and Geelhaar, Lutz},
  title    = {Self-Assembly of Well-Separated {AlN} Nanowires Directly on Sputtered Metallic {TiN} Films},
  journal  = {physica status solidi (RRL) – Rapid Research Letters},
  year     = {2020},
  volume   = {14},
  number   = {1},
  pages    = {1900615},
  month    = jan,
  abstract = {The self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire is demonstrated In this study. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range. This article is protected by copyright. All rights reserved.},
  arxiv    = {1910.07391},
  doi      = {10.1002/pssr.201900615},
  keywords = {AlN, metallic substrates, molecular beam epitaxy, nanowires growth, TiN sputtering},
}