@ARTICLE{Bergbauer_jcg_2011,
  author = {Bergbauer, W. and Strassburg, M. and K\"olper, Ch. and Linder, N.
	and Roder, C. and L\"ahnemann, J. and Trampert, A. and F\"undling,
	S. and Li, S.F. and Wehmann, H.-H. and Waag, A},
  title = {{N-face} {GaN} nanorods: Continuous-flux {MOVPE} growth and morphological
	properties},
  journal = J. Cryst. Growth,
  year = {2011},
  volume = {315},
  pages = {164--167},
  number = {1},
  abstract = {We demonstrate the morphological properties of height, diameter and
	shape controlled N-face GaN nanorods (NRs) by adjusting conventional
	growth parameters of a standard metalorganic vapour phase epitaxy
	(MOVPE) growth process. Particularly the hydrogen fraction within
	the carrier gas was shown to be an important shaping tool for the
	grown nanostructures. Additionally, the aspect ratio of the NRs was
	successfully tuned by increasing the pitch of the nanoimprint lithography
	(NIL) pattern, while maintaining the hole-diameter constant. An optimum
	aspect ratio could be found at pitches between 400 and 800�nm, whereas
	larger pitches are counter-productive. The major conclusion drawn
	from our experiments is that the whole amount of growth material
	available over the masked surface contributes to the growth of the
	NRs.},
  doi = {10.1016/j.jcrysgro.2010.07.067},
  keywords = {A1. Crystal morphology, A1. Nanostructures, A2. Metalorganic vapour
	phase epitaxy, B1. Nitrides}
}