@ARTICLE{Bergbauer_nt_2010,
  author = {Bergbauer, W. and Strassburg, M. and K\"olper, Ch. and Linder, N.
	and Roder, C. and L\"ahnemann, J. and Trampert, A. and F\"undling,
	S. and Li, S. F. and H-H Wehmann and Waag, A.},
  title = {Continuous-flux {MOVPE} growth of position-controlled N-face {GaN}
	nanorods and embedded {InGaN} quantum wells},
  journal = Nanotechnology,
  year = {2010},
  volume = {21},
  pages = {305201},
  number = {30},
  abstract = {We demonstrate the fabrication of N-face GaN nanorods by metal organic
	vapour phase epitaxy (MOVPE), using continuous-flux conditions. This
	is in contrast to other approaches reported so far, which have been
	based on growth modes far off the conventional growth regimes. For
	position control of nanorods an SiO 2 masking layer with a dense
	hole pattern on a c -plane sapphire substrate was used. Nanorods
	with InGaN/GaN heterostructures have been grown catalyst-free. High
	growth rates up to 25 µm h − 1 were observed and a well-adjusted
	carrier gas mixture between hydrogen and nitrogen enabled homogeneous
	nanorod diameters down to 220 nm with aspect ratios of approximately
	8:1. The structural quality and defect progression within nanorods
	were determined by transmission electron microscopy (TEM). Different
	emission energies for InGaN quantum wells (QWs) could be assigned
	to different side facets by room temperature cathodoluminescence
	(CL) measurements.},
  doi = {10.1088/0957-4484/21/30/305201}
}