@Article{Cheze_apl_2018,
  author   = {Ch\`eze, C. and Feix, F. and L\"ahnemann, J. and Flissikowski, T. and Kry\'sko, M. and Wolny, P. and Turski, H. and Skierbiszewski, C. and Brandt, O.},
  title    = {Luminescent {N}-polar ({In,Ga)N/GaN} quantum wells achieved by plasma-assisted molecular beam epitaxy at temperature exceeding 700 $^\circ${C}},
  journal  = {Appl. Phys. Lett.},
  year     = {2018},
  volume   = {112},
  number   = {2},
  pages    = {022102},
  abstract = {Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.},
  arxiv    = {1710.08351},
  doi      = {10.1063/1.5009184}
}