@ARTICLE{Cheze_jvstb_2013,
  author = {Caroline Ch\`eze and Marcin Siekacz and Grzegorz Muziol and Henryk
	Turski and Szymon Grzanka and Marcin Kry\'sko and Jan L. Weyher and
	Michal Bo\'ckowski and Christian Hauswald and Jonas L\"ahnemann and
	Oliver Brandt and Martin Albrecht and Czeslaw Skierbiszewski},
  title = {Investigation on the origin of luminescence quenching in {N-polar}
	{(In,Ga)N} multiple quantum wells},
  journal = {J. Vac. Sci. Technol. B},
  year = {2013},
  volume = {31},
  pages = {03C130},
  number = {3},
  abstract = {The growth of N-polar (In,Ga)N structures by plasma-assisted molecular
	beam epitaxy is studied. (In,Ga)N multiple quantum well samples with
	atomically smooth surface were grown and their good structural quality
	was confirmed by x-ray diffraction, scanning transmission electron
	microscopy, and defect selective etching. The In incorporation was
	higher in the N-polar than in the Ga-polar oriented crystal, consistent
	with previous reports. However, despite the good morphological and
	structural properties of these samples, no photoluminescence signal
	from the (In,Ga)N wells was detected. In contrast, a thick N-polar
	(In,Ga)N layer exhibited a broad peak at 620 nm in good agreement
	with the In content determined by x-ray diffraction. The potential
	source of the luminescence quenching in the N-polar (In,Ga)N multiple
	quantum wells is discussed and attributed either to a strong nonradiative
	recombination channel at the surface promoted by the electric field
	or to the high concentration of point defects at the interfaces of
	the quantum well structures.},
  doi = {10.1116/1.4802964},
  keywords = {gallium compounds; III-V semiconductors; indium compounds; photoluminescence;
	radiation quenching; scanning-transmission electron microscopy; semiconductor
	quantum wells; wide band gap semiconductors},
  numpages = {7},
  publisher = {AVS},
}