@ARTICLE{Dimakis_cgd_2011,
  author = {Dimakis, Emmanouil and L\"ahnemann, Jonas and Jahn, Uwe and Breuer,
	Steffen and Hilse, Maria and Geelhaar, Lutz and Riechert, Henning},
  title = {Self-Assisted Nucleation and Vapor–Solid Growth of {InAs} Nanowires
	on Bare {Si(111)}},
  journal = Cryst. Growth Des.,
  year = {2011},
  volume = {11},
  pages = {4001--4008},
  number = {9},
  abstract = {The nucleation and growth of InAs nanowires on bare Si(111) has been
	investigated by molecular beam epitaxy. Nontapered InAs nanowires
	with high aspect ratio were grown perpendicular to the substrate
	without the use of catalyst particles, surface oxide, or other substrate
	mask. The nucleation of InAs takes place in In-rich areas forming
	spontaneously on the substrate in the beginning of the growth process.
	As the nucleation proceeds, the local stoichiometry on the growth
	interface changes from In-rich to As-rich, and the growth continues
	in a vapor–solid mode. This transition to As-rich conditions is correlated
	with the evolution of nanowire morphology, that is, with the growth
	becoming strictly uniaxial and with well-defined vertical sidewalls
	forming. The diameter, the number density, and the axial growth rate
	of the nanowires were found to depend exclusively on the surface
	diffusivity of In adatoms on the substrate.},
  doi = {10.1021/cg200568m}
}