@Article{Jahn_sst_2016,
  Title                    = {The hydride vapor phase epitaxy of {GaN} on silicon covered by nanostructures},
  Author                   = {Jahn, U. and Musolino, M. and L\"ahnemann, J. and Dogan, P. and Garrido, S. Fern\'andez and Wang, J. F. and Xu, K. and Cai, D. and Bian, L. F. and Gong, X. J. and Yang, H.},
  Journal                  = {Semicond. Sci. Technol.},
  Volume                   = {31},
  Number                   = {6},
  Pages                    = {065018},
  Year                     = {2016},
  Abstract                 = {GaN several tens of μ m thick has been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates were covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low- T ) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in the cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features provide an insight into the growth process. During a second high-temperature (high- T ) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, the incorporation of silicon into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high- T ) HVPE step depends on the specific structure of the AlN/GaN template, where in the first case, epitaxy is dominated by the formation of slowly growing facets, while in the second case, epitaxy proceeds directly along the c -axis. For templates without GaN nanostructures, cathodoluminescence spectra excited close to the Si/GaN interface show a broadening toward higher energies, indicating the incorporation of silicon at a high dopant level.},
  Doi                      = {10.1088/0268-1242/31/6/065018}
}