@InBook{Lim_2017b,
  chapter   = {Chapter 3},
  pages     = {77--113},
  title     = {{III}-nitride Nanostructures for Intersubband Optoelectronics},
  publisher = {World Scientific (Europe)},
  year      = {2017},
  author    = {C. B. Lim and A. Ajay and J. L\"ahnemann and D. A. Browne and E. Monroy},
  editor    = {Zhe Chuan Feng},
  month     = jun,
  isbn      = {978-1-78634-318-5},
  abstract  = {In intersubband optoelectronics, transitions between confined electron (or hole) levels in the conduction (or valence) band of heterostructures are utilized to emit or detect infrared radiation. III-nitride semiconductors have emerged as promising materials for new intersubband technologies due to their large conduction band offset and sub-picosecond intersubband relaxation time. Furthermore, the large energy of longitudinal-optical phonons in GaN opens up prospects for ultra-high-speed devices for fiber-optic telecommunication, or for the operation at room temperature of THz quantum cascade lasers. Additionally, GaN-based intersubband devices could cover the 5–10THz band, inaccessible to GaAs-based technologies.},
  booktitle = {III-Nitride Materials, Devices and Nano-Structures},
  doi       = {10.1142/9781786343192_0003},
}