@Article{Lim_jap_2015,
  Title                    = {Intersubband transitions in nonpolar {GaN/Al(Ga)N} heterostructures in the short- and mid-wavelength infrared regions},
  Author                   = {Lim, C. B. and Beeler, M. and Ajay, A. and L\"ahnemann, J. and Bellet-Amalric, E. and Bougerol, C. and Monroy, E.},
  Journal                  = {J. Appl. Phys.},
  Volume                   = {118},
  Number                   = {1},
  Pages                    = {014309},
  Year                     = {2015},
  Abstract                 = {This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 μm. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 μm, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates.},
  Arxiv                    = {1504.04989},
  Doi                      = {10.1063/1.4926423}
}