@Article{Musolino_apl_2014,
  Title                    = {Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on {(In,Ga)N/GaN} nanowires},
  Author                   = {Musolino, M. and Tahraoui, A. and Limbach, F. and L\"ahnemann, J. and Jahn, U. and Brandt, O. and Geelhaar, L. and Riechert, H.},
  Journal                  = {Appl. Phys. Lett.},
  Volume                   = {105},
  Number                   = {8},
  Pages                    = {083505},
  Year                     = {2014},
  Abstract                 = {We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact.},
  Arxiv                    = {1410.3709},
  Doi                      = {http://dx.doi.org/10.1063/1.4894241}
}