@INPROCEEDINGS{Riechert_procspie_2011,
  author = {Henning Riechert and Oliver Brandt and Caroline Cheze and Vincent
	Consonni and Matthias Knelangen and Jonas	
	L\"ahnemann and Friederich Limbach and Carsten Pf\"uller and Achim
	Trampert and Martin W\"olz and Lutz Geelhaar},
  title = {Nitride nanowire structures for {LED} applications},
  booktitle = Proc. SPIE,
  year = {2011},
  volume = {7954},
  publisher = {SPIE},
  abstract = {This paper discusses some of the advantages of nanowire structures
	for use in LEDs as well as the challenges that need to be overcome
	towards the realisation of real-world devices. Our experimental results
	pertain to group-III nitride nanowire structures grown by MBE. We
	present clear evidence that the catalyst-free growth approach on
	Si yields best results with respect to structural and optical material
	properties. We elucidate the mechanism of nanowire nucleation and
	the factors determining the initial nanowire diameter, discuss the
	issue of InGaN growth in small-diameter nitride nanowires and review
	the results reported for nanowire-based group-III nitride LEDs reported
	so far.},
  doi = {10.1117/12.877458}
}