@ARTICLE{Takagaki_jap_2010,
  author = {Takagaki, Y. and J. L\"ahnemann and Jenichen, B. and Herfort, J.
	and Herrmann, C. and Jahn, U.},
  title = {Distribution of structural domains in {MnAs} layers grown on {GaAs}
	substrates},
  journal = J. Appl. Phys.,
  year = {2010},
  volume = {108},
  pages = {123510},
  number = {12},
  abstract = {Electron backscatter diffraction is utilized to determine the distribution
	of coexisting structural domains in MnAs layers prepared on GaAs
	substrates. In a layer grown on a GaAs(111)B substrate using solid
	phase epitaxy, the structural domains roughly correspond to the morphological
	features of the surface. The domains are, in contrast, considerably
	larger in size than the surface roughness when the substrate is GaAs(113)A.
	We examine the role of the freedom in in-plane crystalline alignment
	for causing such a difference using a numerical model. In a layer
	grown at an extraordinary high temperature (600 °C) on a GaAs(111)B
	substrate, (0001) and (1math0l) orientations are interwoven. While
	the (0001) component is present mainly as thin flat films, a mixture
	of all the components forms thick elongated islands in the surrounding
	of the films. Consequences of such an inhomogeneity on the magnetic
	and electrical properties of the layer are discussed.},
  doi = {10.1063/1.3520654},
  keywords = {electrical resistivity; electron backscattering; electron diffraction;
	III-V semiconductors; magnetic epitaxial layers; magnetic hysteresis;
	magnetic semiconductors; magnetic transitions; manganese compounds;
	semiconductor epitaxial layers; semiconductor growth; solid phase
	epitaxial growth; surface morphology; surface roughness},
  numpages = {7},
  publisher = {AIP}
}