@ARTICLE{Takagaki_sst_2011,
  author = {Takagaki, Y. and Jenichen, B. and Jahn, U. and Ramsteiner, M. and
	K-J Friedland and J L\"ahnemann},
  title = {Hot wall epitaxy of topological insulator films},
  journal = Semicond. Sci. Technol.,
  year = {2011},
  volume = {26},
  pages = {125009},
  number = {12},
  abstract = {Hot-wall-epitaxy growth of Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 films
	is carried out on Si as well as GaAs surfaces. For Bi 2 Se 3 , self-assembled
	dots are formed at the initial stage of the growth due to the large
	lattice mismatch. The dots expand in a way to fill the whole substrate
	surface with (0 0 0 1)-oriented domains. While no in-plane epitaxial
	orientation relationship is established between the films and the
	substrates, the influence of the substrates is reflected in the morphology
	of the films. Throughout the growth, micrometer-size free-standing
	disks are spontaneously generated and eventually cover the whole
	surface. The disk geometry manifests that the Bi 2 Se 3 crystal grows
	preferentially in the in-plane directions of the (0 0 0 1)-plane.
	For Bi 2 Te 3 and Sb 2 Te 3 , we experience thermal decomposition.
	Although nanowires can be generated under low source-flux intensities,
	they are solely composed of Te as a consequence. Owing to different
	solidification temperatures, we obtain Bi 2 Te 3 islands when the
	substrate temperature is raised. The surface of these islands is
	remarkably flat and the typical thickness is less than 10 nm.},
  doi = {10.1088/0268-1242/26/12/125009}
}