@ARTICLE{Wang_cgd_2013,
  author = {Wang, Xue and Li, Shunfeng and Mohajerani, Matin Sadat and Ledig,
	Johannes and Wehmann, Hergo-Heinrich and Mandl, Martin and Strassburg,
	Martin and Steegm\"uller, Ulrich and Jahn, Uwe and L\"ahnemann, Jonas
	and Riechert, Henning and Griffiths, Ian and Cherns, David and Waag,
	Andreas},
  title = {Continuous-Flow {MOVPE} of {Ga}-Polar {GaN} Column Arrays and Core–Shell
	{LED} Structures},
  journal = Cryst. Growth Des.,
  year = {2013},
  volume = {13},
  pages = {3475--3480},
  number = {8},
  abstract = {Arrays of dislocation free uniform Ga-polar GaN columns have been
	realized on patterned SiOx/GaN/sapphire templates by metal organic
	vapor phase epitaxy using a continuous growth mode. The key parameters
	and the physical principles of growth of Ga-polar GaN three-dimensional
	columns are identified, and their potential for manipulating the
	growth process is discussed. High aspect ratio columns have been
	achieved using silane during the growth, leading to n-type columns.
	The vertical growth rate increases with increasing silane flow. In
	a core–shell columnar LED structure, the shells of InGaN/GaN multi
	quantum wells and p-GaN have been realized on a core of n-doped GaN
	column. Cathodoluminescence gives insight into the inner structure
	of these core–shell LED structures.},
  doi = {10.1021/cg4003737}
}